[20a-B203-1~10] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-B203-7] Effects of Weak Localization of Carriers on the Electron-Phonon Interaction in W-Doped In₂O₃ Thin Films

〇Tetsuya Yamamoto^1,2, Rajasekaran Palani¹, Hisao Makino² (1.Kochi Univ. Tech., Res. Inst., 2.Kochi Univ. Tech.)

Keywords:indium oxide, weak localization, electron phonon interaction

In this study, we elucidate the effects of weak localization of carriers on the electron phonon interaction in polycrystalline W-Doped In₂O₃ (p-IWO) films with different thicknesses. The films were deposited on glass substrates and obtained with solid-phase crystallization of amorphous films. With decreasing film thicknesses from 50 to 5 nm, the mean free path of carrier electrons decreases with a little thickness dependence of carrier concentration. For p-IWO films, decreasing thicknesses below 10 nm caues to the localization of carriers, resulting in distinct reduced mean free path of carriers. In such films, the interplay between electron phonon interaction and disorder will cause reduced carrier transport.