[20a-B204-1~11] 6.3 Oxide electronics

△ [20a-B204-2] Mechanism Elucidation of Resistance Relaxation Phenomenon in Perovskite Resistive Random Access Memory

〇Hayato Nakamura¹, Hiromasa Aoki¹, Hiroyuki Kai¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

Keywords:Schottky, semiconductor, ReRAM

Recently, there have been studies on AI applications using the resistive relaxation phenomenon of resistive random access memory Pt/Nb:SrTiO3. In this study, we extracted the change of Schottky parameters (SPs) over time to elucidate the relaxation mechanism. All SPs were found to be linearly dependent on the logarithm of time. This change is considered to be caused by the trapping of electrons in the defects, which were once de-trapped by the application of forward bias to set the device to LRS.