[20a-B204-1~11] 6.3 Oxide electronics

△ [20a-B204-4] Ion-Gating Reservoir for High Performance Reservoir Computing

〇(D)Daiki Nishioka^1,2, Takashi Tsuchiya^1,2, Wataru Namiki¹, Makoto Takayanagi^1,2, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1.NIMS, 2.TUS)

Keywords:physical reservoir, ion-gating, electric double layer

In this study, we developed an ion-gating reservoir (IGR), which is a physical reservoir that operates on ion-electron dynamics induced at the ion conductor/semiconductor interface of ion-gated transistors that use an electric double layer or redox reaction. The performance of IGR was evaluated through tasks such as image recognition and time series data analysis.