[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-1] Porous crystallization properties of 4H-SiC with different doping concentrations by voltage-controlled anodization

〇(M2)Keita Kodera¹, Taisei Mizuno¹, Syouta Akiyosi¹, Weifang Lu², Yiyu Ou³, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satishi Kamiyama¹ (1.Meijo Univ, 2.Xianmen Univ, 3.Technical University Denmark)

Keywords:SiC, porous