[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-10] Improvement of surface flatness by intermittent melt-back process
in SiC solution growth

〇(M2)Shuyang Ma¹, Can Zhu², Yifan Dang¹, Xinbo Liu², Shunta Harada^1,2, Miho Tagawa^1,2, Toru Ujihara^1,2 (1.Graduate School of Engineering, Nagoya Univ, 2.IMaSS, Nagoya Univ)

Keywords:SiC, Crystal growth, melt-back

In SiC solution growth, it is important to maintain the macrostep at an appropriate height to improve crystal quality. It has been reported that controlling the step flow direction and the solvent flow direction in relation to the step flow direction is effective in controlling excessive macrostep development. However, even with flow control, macrosteps continue to evolve in accordance with the growth time. We focused on the meltback process as a method to suppress this excessive development. Normally, meltback is a process to dissolve the seed crystal surface before crystal growth, but in this study, meltback was performed during and after growth, and the improvement of surface flatness was experimentally investigated.