[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-11] Analysis of the effect of additive elements in SiC solution growth
using first-principles calculation

〇Shota Seki¹, Takahiro Kawamura², Shunta Harada^1,3, Miho Tagawa^1,3, Toru Ujihara^1,3 (1.Grad. School of Eng. Nagoya Univ., 2.Grad. School of Eng. Mie Univ., 3.IMaSS Nagoya Univ.)

Keywords:crystalgrowth, SiC