[20a-C306-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-C306-3] Optimization of simultaneous measurement of magnetic field and temperature by silicon vacancy quantum sensor using simultaneous resonance optically detected magnetic resonance

〇Tomoaki Tanaka¹, Yuichi Yamazaki¹, Kazutoshi Kojima², Takeshi Ohshima¹ (1.QST, 2.AIST)

Keywords:silicon carbide, silicon vacancy, simultaneous resonance

Conventional simultaneous ODMR measurement of ground and excited states requires a long measurement time due to the small ODMR contrast of the excited state. The use of simultaneous resonance is expected to reduce the measurement time because of increasing the ODMR contrast of the excited state. However, this method decreases the ODMR contrast of the ground state, so it is necessary to optimize a RF power ratio between the ground state and the simultaneous resonance. In this study, we optimized the RF power ratio for the simultaneous ODMR measurement of the ground and excited states using simultaneous resonance.