[20a-C306-1~11] 15.6 IV族系化合物（SiC）

▲ [20a-C306-8] Simulation of Macrosteps Development and Design of Control Pattern for Solution Growth of SiC

〇Yifan Dang¹、Xinbo Liu¹、Yuma Fukami¹、Shuyang Ma¹、Can Zhu²、Shunta Harada^1,2、Miho Tagawa^1,2、Toru Ujihara^1,2,3 (1.Nagoya Univ.、2.IMaSS, Nagoya Univ.、3.GaN-OIL, AIST)

キーワード：solution growth, CFD simulation, step morphology

During the solution growth of off-axis SiC crystal, undesirable step morphology on the growth interface, namely excessive step bunching, strongly affects the quality of bulk crystal and may cause defects like inclusion and 2D nucleation.
The present study, for the first time, proposed a simulation model which can directly connect the macroscopic control parameters (growth temperature, crystal rotation speed, crucible rotation speed, etc.) to the dynamic evolution of step morphology on the entire crystal surface. The predictions of macrostep distribution matched well with the experimental results. This model was applied to investigate the effect of several control parameters on step morphology. Moreover, a more sophisticated control pattern was accordingly designed, which requires periodic rotation of both crystal and crucible. This pattern exhibited homogeneous step morphology with moderate step bunching level on the entire crystal surface.
The proposed simulation method can provide a new perspective to understand and control the crystal growth process. Higher quality SiC bulk crystal is expected to be obtained by further improving and optimizing the control pattern via this simulation method