13:00 〜 13:45
▲ [20p-A106-1] [INVITED] Analysis of two-dimensional RF sheath dynamics in capacitively coupled Ar plasmas using a high-performance particle-in-cell simulation
キーワード：Plasma equipment, particle-in-cell simulation, RF discharges
Spatial nonuniformity is an essential issue in RF capacitively coupled plasmas (CCPs), which should be simulated in at least two-dimensional geometry. Because of excellent spatial uniformity and effective ion energy control, dual-frequency (DF) CCPs are commonly used in semiconductor etching. Particle-in-cell simulations are essential for the time-varying non-Maxwellian energy distribution and nonlinear effects. The large computation load in DF CCP simulation was overcome using a two-dimensional particle-in-cell simulation parallelized with a graphics processing unit. Understanding the time-dependent sheath dynamics is essential to improving the spatial uniformity of ion flux and energy-angle distributions. In this presentation, we report the phase-resolved electron trajectories and the effect of the electrode structure on the RF sheath dynamics. Time-dependent space charge density is monitored on the focus ring to investigate the ion energy and angle distributions.