The 83rd JSAP Autumn Meeting 2022

Presentation information

Symposium (Oral)

Symposium » Past, current, and future of hexagonal BN

[20p-A200-1~11] Past, current, and future of hexagonal BN

Tue. Sep 20, 2022 1:30 PM - 6:10 PM A200 (A200)

Rai Moriya(Univ. of Tokyo), Moriyama Satoshi(Tokyo Denki Univ.)

1:35 PM - 2:05 PM

[20p-A200-2] Synthesis of hexagonal boron nitride single crystals

Takashi Taniguchi1 (1.NIMS)

Keywords:Hexagonal boron nitride, Flux single crystals growth, High pressure synthesis

Hexagonal boron nitride (hBN) single crystals are atomically flat and have no non-dangling bond properties on the surface, and are used as substrates and gate insulators for two-dimensional optical and electronic devices such as graphene. This paper introduces the author's recent efforts to synthesize hBN single crystals under high pressure and ambient pressure by solvent method with the aim of reducing carbon and nitrogen, which are the main residual impurities of hBN and search for new functions by boron and nitrogen isotope control.