[20p-A200-1~11] Past, current, and future of hexagonal BN

[20p-A200-4] Evaluation of h-BN crystals in terms of its influence on adjacent graphene

〇Momoko Onodera¹, Kenji Watanabe², Miyako Isayama¹, Satoru Masubuchi¹, Rai Moriya¹, Taishi Haga³, Takashi Taniguchi^2,1, Susumu Saito³, Tomoki Machida¹ (1.IIS, Univ. of Tokyo, 2.NIMS, 3.Tokyo Institute of Technology)

Keywords:h-BN, van der Waals heterostructure, graphene

Hexagonal boron nitride (h-BN) is the only insulating layered material having a bandgap of ~6 eV. It is widely used as an atomically flat substrate, capping layer, and insulating layer for van der Waals heterostructures. We evaluated the quality of h-BN single crystals by measuring the transport properties of graphene deposited on exfoliated h-BN flakes.