[20p-A200-1~11] Past, current, and future of hexagonal BN

[20p-A200-9] Defect-assisted tunneling in graphene/C-doped h-BN junctions

〇Yuta Seo¹, Yuki Tsuji¹, Momoko Onodera¹, Yijin Zhang¹, Satoru Masubuchi¹, Rai Moriya¹, Kenji Watanabe², Takashi Taniguchi^1,2, Tomoki Machida^1,3 (1.IIS Univ. Tokyo, 2.NIMS, 3.CREST-JST)

Keywords:hexagonal boron nitride, graphene, tunneling transport

We report the tunneling transport measurements in bilayer graphene/C-doped h-BN/graphite junctions. In carbon-doped (C-doped) h-BN, carbon impurities were intentionally introduced into h-BN crystals synthesized under high-pressure and high-temperature conditions by a carbon annealing process. We observed the resonant tunneling through defect states in the C-doped h-BN barrier. We will discuss the density of states of the bilayer graphene determined from the defect-assited tunneling, and the relationship between the defect states and carbon impurities.