【Highlighted Presentation】Amorphous oxide semiconductors and their social Implementation

Hideo Hosono

Presentation information

Symposium (Oral)

Symposium » New Frontiers on Glasses and Glassy states ~2022 International Glass Year IYOG Memorial Symposium~

[20p-B200-1~7] New Frontiers on Glasses and Glassy states ~2022 International Glass Year IYOG Memorial Symposium~

Tue. Sep 20, 2022 1:30 PM - 5:35 PM B200 (B200)

Tomokatsu Hayakawa(Nagoya Inst. of Tech.), Ikufumi Katayama(Yokohama Natl. Univ.), Sunao Kurimura(NIMS), Tsuyoshi Honma(Nagaoka Univ. of Tech.), Yoshihiro Takahashi(Tohoku Univ.), Tetsuo Kishi(Tokyo Institute of Technology)

4:45 PM - 5:30 PM

[20p-B200-6] 【Highlighted Presentation】Amorphous oxide semiconductors and their social Implementation

〇Hideo Hosono^1,2 (1.TIT, 2.NIMS)

Keywords:amorphous oxide semiconductor, thin film transistor, display

In amorphous materials, control of the Fermi level is difficult due to high concentration of defects and structural disorder. The n-type transparent amorphous oxide semiconductor (TAOS) proposed by us in 1996 can move Ef into the conduction band by a gate voltage, and can achieve an order of magnitude larger mobility than a-Si:H. One of them, IGZO-TFT, has been widely applied to flat panel displays such as OLED-TVs and tablet PCs. Recently, TAOS-TFTs have been realized with mobility (~70 cm2/Vs) comparable to polysilicon and excellent stability, and effort to replace LTPS in applied devices is beginning.