4:45 PM - 5:30 PM
[20p-B200-6] 【Highlighted Presentation】Amorphous oxide semiconductors and their social Implementation
Keywords:amorphous oxide semiconductor, thin film transistor, display
In amorphous materials, control of the Fermi level is difficult due to high concentration of defects and structural disorder. The n-type transparent amorphous oxide semiconductor (TAOS) proposed by us in 1996 can move Ef into the conduction band by a gate voltage, and can achieve an order of magnitude larger mobility than a-Si:H. One of them, IGZO-TFT, has been widely applied to flat panel displays such as OLED-TVs and tablet PCs. Recently, TAOS-TFTs have been realized with mobility (~70 cm2/Vs) comparable to polysilicon and excellent stability, and effort to replace LTPS in applied devices is beginning.