[20p-B201-1~16] 15.4 III-V-group nitride crystals

▲ [20p-B201-11] Atomic Scale Mechanism of Polarity Control in Molecular Beam Homoepitaxy on Sputter-Annealed N-polar AlN Templates

〇Yusuke Hayashi¹, Tetsuya Tohei¹, Zexuan Zhang², Huili (Grace) Xing^2,3,4, Debdeep Jena^2,3,4, Yongjin Cho², Hideto Miyake⁵, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Sch. Elec. Comp. Eng., Cornell Univ., 3.Dept. Mater Sci. Eng., Cornell Univ., 4.Kavli Inst. Cornell Nano. Sci., 5.Grad. Sch. Eng., Mie Univ.)

Keywords:AlN, TEM

High-quality N-polar AlN templates fabricated by face-to-face annealing and sputtering (FFA Sp-AlN) are promising for realizing novel N-polar Al-rich AlGaN devices. However, N-polar AlN and AlGaN growths are still in the developmental phase due to the difficulty of polarity control and smooth two-dimensional growth. In this work, we report transmission electron microscopy (TEM) analysis for exploring the polarity and TD properties of molecular beam epitaxy (MBE) grown AlN on N-polar FFA Sp-AlN.