[20p-B201-1~16] 15.4 III-V族窒化物結晶

▲ [20p-B201-11] Atomic Scale Mechanism of Polarity Control in Molecular Beam Homoepitaxy on Sputter-Annealed N-polar AlN Templates

〇Yusuke Hayashi¹、Tetsuya Tohei¹、Zexuan Zhang²、Huili (Grace) Xing^2,3,4、Debdeep Jena^2,3,4、Yongjin Cho²、Hideto Miyake⁵、Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ.、2.Sch. Elec. Comp. Eng., Cornell Univ.、3.Dept. Mater Sci. Eng., Cornell Univ.、4.Kavli Inst. Cornell Nano. Sci.、5.Grad. Sch. Eng., Mie Univ.)

キーワード：AlN, TEM

High-quality N-polar AlN templates fabricated by face-to-face annealing and sputtering (FFA Sp-AlN) are promising for realizing novel N-polar Al-rich AlGaN devices. However, N-polar AlN and AlGaN growths are still in the developmental phase due to the difficulty of polarity control and smooth two-dimensional growth. In this work, we report transmission electron microscopy (TEM) analysis for exploring the polarity and TD properties of molecular beam epitaxy (MBE) grown AlN on N-polar FFA Sp-AlN.