[20p-B201-1~16] 15.4 III-V-group nitride crystals

[20p-B201-12] Dislocation Morphologies of Molecular Beam Epitaxy Grown AlN on Sputter-Annealed N-polar AlN

〇Yusuke Hayashi¹, Tetsuya Tohei¹, Zexuan Zhang², Huili (Grace) Xing^2,3,4, Debdeep Jena^2,3,4, Yongjin Cho², Hideto Miyake⁵, Akira Sakai¹ (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.Sch. Elec. Comp. Eng., Cornell Univ., 3.Dept. Mater Sci. Eng., Cornell Univ., 4.Kavli Inst. Cornell Nano. Sci., 5.Grad. Sch. Eng., Mie Univ.)

Keywords:AlN, TEM

Low-dislocation-density N-polar AlN templates fabricated by face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) are promising for realizing novel N-polar Al_xGa_1-xN optoelectronic and electronic devices. This work reports plan-view threading dislocation (TD) analysis of molecular beam epitaxy (MBE) grown AlN on N-polar FFA Sp-AlN.