Relationship between polarity inversion and growth conditions of<br />AlGaN on N-polar AlN

Taketo Kowaki; Wataru Matsumura; Ryo Okuno; Kouki Hanasaku; Minagi Miyamoto; Kai Fuji; Satoshi Kurai; Narihito Okada; Yongzhao Yao; Yukari ishikawa; Yoichi Yamada

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-B201-1~16] 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 1:30 PM - 6:00 PM B201 (B201)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo), Yusuke Hayashi(Osaka Univ.)

5:30 PM - 5:45 PM

[20p-B201-15] Relationship between polarity inversion and growth conditions of
AlGaN on N-polar AlN

〇Taketo Kowaki¹, Wataru Matsumura¹, Ryo Okuno¹, Kouki Hanasaku¹, Minagi Miyamoto¹, Kai Fuji¹, Satoshi Kurai¹, Narihito Okada¹, Yongzhao Yao², Yukari ishikawa², Yoichi Yamada¹ (1.Grad.School of Sci.& Tech. for Inovation Yamaguchi Univ., 2.JFCC)

Keywords:semiconductor

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Presentation information

[20p-B201-1~16] 15.4 III-V-group nitride crystals

[20p-B201-15] Relationship between polarity inversion and growth conditions ofAlGaN on N-polar AlN

[20p-B201-15] Relationship between polarity inversion and growth conditions of
AlGaN on N-polar AlN