Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs

Koki Hanasaku; Wataru Matsumura; Taketo Kowaki; Ryo Okuno; Shunsuke Matsuda; Daisuke Inahara; Minagi Miyamoto; Kai Fujii; Satoshi Kurai; Narihito Okada; Yongzhao Yao; Yukari Ishikawa; Yoichi Yamada

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[20p-B201-1~16] 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 1:30 PM - 6:00 PM B201 (B201)

Tsutomu Araki(Ritsumeikan Univ.), Atsushi Kobayashi(Univ. of Tokyo), Yusuke Hayashi(Osaka Univ.)

5:45 PM - 6:00 PM

[20p-B201-16] Si doping effects in AlGaN channel layer on performance of N-polar AlGaN/AlN heterojunction FETs

〇Koki Hanasaku¹, Wataru Matsumura¹, Taketo Kowaki¹, Ryo Okuno¹, Shunsuke Matsuda¹, Daisuke Inahara¹, Minagi Miyamoto¹, Kai Fujii¹, Satoshi Kurai¹, Narihito Okada¹, Yongzhao Yao², Yukari Ishikawa², Yoichi Yamada¹ (1.Grad.School of Sci.&Tech.for Innovation,Yamaguchi Univ, 2.JFCC)

Keywords:AlN

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