[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [20p-B203-1] Impact of Au surfactant on composition and optical properties of gallium oxysulfide films

〇(D)Weiqi Zhou¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech)

Keywords:gallium oxide, PLD, sulfur substitution

β-Ga₂O₃ is a wide bandgap semiconductor that is expected to be applied for the next-generation power devices. However, the lack of p-type materials largely restricts its applicability. To realize the Ga₂O₃-based p-type materials, our group proposed a N-doping method by using pulsed-laser deposition (PLD) technique and succeed in growing β-Ga₂O₃ films with high N concentration and high crystallinity. Due to the deep acceptor level of N, however, p-type behavior has not been found yet. We also investigated an approach for activation of N acceptors: making valence band maximum shallower by substituting O atoms with isovalent S atoms. In this study, we examine roles of a Au surfactant in the growth of gallium oxysulfide films and find enhanced S incorporation probably due to Au-thiol bonding.