Theoretical study for structural stability of Ga<sub>2</sub>O<sub>3</sub> with charged oxygen vacancies

Toru Akiyama; Takahiro Kawamura; Tomonori Ito

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Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

4:15 PM - 4:30 PM

[20p-B203-13] Theoretical study for structural stability of Ga₂O₃ with charged oxygen vacancies

〇Toru Akiyama¹, Takahiro Kawamura¹, Tomonori Ito¹ (1.Mie Univ.)

Keywords:Ga2O3, First-principles calculations, Structural stability

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Presentation information

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-13] Theoretical study for structural stability of Ga2O3 with charged oxygen vacancies

[20p-B203-13] Theoretical study for structural stability of Ga₂O₃ with charged oxygen vacancies