The 83rd JSAP Autumn Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

4:30 PM - 4:45 PM

[20p-B203-14] Thermodynamic study of group-III sesquioxide growth by molecular beam epitaxy

〇Rie Togashi1, Haruka Ishida1, Ken Goto2, Masataka Higashiwaki3,4, Yoshinao Kumagai2 (1.Sophia Univ., 2.Tokyo Univ. of Agric. and Tech., 3.Osaka Metropolitan Univ., 4.NICT)

Keywords:Ga2O3, thermodynamics, MBE