[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-22] Growth of Ga₂O₃ thin films on Si substrates by mist CVD technique

〇(M2)Eiji Kikuchi¹, Kaneko Kentaro¹, Fujita Shizuo¹ (1.Kyoto Univ.)

Keywords:Galium oxide, Zinc oxide, Mist CVD

Polycrystalline Ga₂O₃ thin films were grown on Si(111) substrates by mist CVD technique. The c-axis oriented ZnO buffer layer and [001] oriented κ-Ga₂O₃ thin films were grown by mist CVD technique on ZnO/n-Si(100) and ZnO/n-Si(111) substrates purchased from GEOMATEC Co., Ltd. The introduction of the ZnO buffer layer significantly improved the crystallinity and planarity of Ga₂O₃ thin films.