【Highlighted Presentation】Crystallinity improvement of 100-mm-diameter β-Ga<sub>2</sub>O<sub>3</sub> epitaxial wafer

Lin ChiaHung; Kentaro Ema; Satoshi Masuya; Quang Tu Thieu; Ryoichi Sakaguchi; Kohei Sasaki; Akito Kuramata

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 20, 2022 1:00 PM - 7:00 PM B203 (B203)

Takeyoshi Onuma(Kogakuin Univ.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

2:15 PM - 2:30 PM

[20p-B203-6] 【Highlighted Presentation】Crystallinity improvement of 100-mm-diameter β-Ga₂O₃ epitaxial wafer

〇Lin ChiaHung¹, Kentaro Ema¹, Satoshi Masuya¹, Quang Tu Thieu¹, Ryoichi Sakaguchi¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

Keywords:Ga2O3, HVPE

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Presentation information

[20p-B203-1~22] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-B203-6] 【Highlighted Presentation】Crystallinity improvement of 100-mm-diameter β-Ga2O3 epitaxial wafer

[20p-B203-6] 【Highlighted Presentation】Crystallinity improvement of 100-mm-diameter β-Ga₂O₃ epitaxial wafer