[20p-C102-1~16] 9.5 New functional materials and new phenomena

[20p-C102-11] Interfacial reaction behavior between ferromagnetic CoFeB and
topological insulator Sb₂Te₃

〇Misako Morota¹, Yuta Saito¹, Shogo Hatayama¹, Noriyuki Uchida¹ (1.AIST)

Keywords:chalcogenide, topological insulator, interface

Topological insulators are expected to be a highly efficient spin source because of their strong spin-orbit interaction. In this study, we investigate the reactivity of materials at the Sb₂Te₃/CoFeB interface and its effect on magnetic properties using the topological insulator Sb₂Te₃ and the ferromagnet CoFeB. Furthermore, the interfacial reaction of the Sb₂Te₃/CoFeB interface was analyzed by XRD and HAXPES in the case of inserting a layer of MgO, which is commonly used as a tunnel insulator in magnetic memory and other applications, into the interface and annealing, and the interface structure and barrier property of MgO were investigated.