[20p-C102-1~16] 9.5 New functional materials and new phenomena

[20p-C102-16] Fluorine insertion into YBa₂Cu₃O_7-x thin films using ionic liquid gating (ILG)

〇Ryo Terada¹, Morito Namba¹, Kantaro Murayama¹, Hiroshi Takatsu¹, Takahito Terashima², Hiroshi Kageyama¹ (1.Kyoto Univ eng, 2.Kyoto Univ sci)

Keywords:mixed-anion, thin film

We have recently succeeded in oxidative fluorine insertion into thin films using ionic liquid gating (ILG). Fluorine insertion into thin film materials has been conventionally performed by reductive method using PVDF or PTFE, or oxidative method using F₂ gas or XeF₂. This method, on the other hand, is an oxidative method that does not involve oxygen desorption and is a simple method. In this study, fluorine insertion into YBa₂Cu₃O_7-x thin films was performed using this method.