[20p-C200-1~11] Device and material technologies based on wireless and optics convergence toward next-generation THz-communication

[20p-C200-10] Semiconductor Heterogeneous Integration Technology and Devices

〇Nobuhiko Nishiyama¹ (1.Tokyo Tech)

Keywords:semiconductor, heterogeneous integration, photonic devices

Toward future realization of optical, electronic, and radio convergence circuits using semiconductors, it is impossible to meet all the required performances using a single material or a material system lattice-matched to a certain material . Therefore, heterogeneous material integration technology will become more and more important in the future. In this report, the basic principles and characteristics of III-V semiconductor direct bonding technology on silicon platforms are reviewed, and then the characteristics of photonic devices based on the bonding technology are described.