[20p-C302-1~12] 6.4 Thin films and New materials

[20p-C302-11] Fabrication and Growth Orientation Control of NaBH₄ Epitaxial Thin Films

〇Ryo Nakayama¹, Yuto Kawaguchi¹, Ryota Shimizu¹, Kazunori Nishio¹, Hiroyuki Oguchi², Sangryun Kim^3,4,5, Shin-ichi Orimo^4,5, Taro Hitosugi^1,6 (1.Tokyo Tech, 2.Shibaura Tech, 3.GIST, 4.WPI-AIMR Tohoku Univ., 5.IMR Tohoku Univ., 6.The Univ. Tokyo)

Keywords:Complex hydrides, Thin film, Infrared laser

Recently, NaBH₄ has attracted much attention as a hydrogen storage material and ionic conductor. For the precise study of the physical properties of NaBH₄, it is important to realize epitaxial thin film synthesis and its growth orientation control. Here, infrared-pulsed-laser deposition (IR-PLD) is a promising way to deposit thin films of complex hydrides because of maintaining the complex ionic structure ([BH₄]^-) during deposition. However, there is no report of the fabrication of thin films of complex hydrides except for LiBH₄ using the IR-PLD. This study reports the synthesis and growth orientation control of NaBH₄ epitaxial thin films using the IR-PLD method.