[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-1] [INVITED] Theoretical Study of Hydrogen Adsorption on SiC Vicinal Surface under CVD Growth Condition

〇Tomoya Kimura¹, Kenta Chokawa², Atsushi Oshiyama², Kenji Shiraishi^2,1 (1.Eng. Nagoya Univ., 2.IMaSS Nagoya Univ.)

Keywords:SiC, CVD, epitaxial growth