[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-6] Surface recombination velocities for oxidized 4H-SiC

〇(M2)Ayato Ogawa¹, Lei Han¹, Tomohisa Kato², Masashi Kato¹ (1.NITech, 2.AIST)

Keywords:SiC, semiconductor

The value of carrier lifetime τ is an important parameter that influences device performance in SiC bipolar devices. In addition, surface recombination is one of the limiting factors of τ, and obtaining quantitative values is indispensable for device design. In this study, the surface recombination rate S was analyzed for 4H-SiC in which the surface of 4H-SiC was treated with an oxide film and post-oxidation annealing(POA) .