MMS pressure dependence of 3C-SiC growth mode deposited at 800℃

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P05 (Arena)

4:00 PM - 6:00 PM

〇(M2)Hikaru Miyamoto¹, Daiki Tsuhara¹, Atsushi Saito¹, Yuzuru Narita¹ (1.Yamagata Univ.)

Keywords:3C-SiC