Characterization of photo-excited carriers in GaAs/GaAsBi structures by Raman spectroscopy

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 9:00 AM - 11:30 AM A105 (A105)

9:45 AM - 10:00 AM

〇Sho Hasegawa¹, Noriyuki Hasuike¹, Kazutaka Kanegae¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

Keywords:GaAsBi, MBE, Raman