Analysis of hopping conduction mechanism in low-temperature-grown GaAs1-xBix

Minato Harada; Tatsuya Umenishi; Yusaku Kozai; Yoriko Tominaga; Mitsuki Yukimune; Fumitaro Ishikawa; Yasutomo Kajikawa

Presentation information

Oral presentation

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 9:00 AM - 11:30 AM A105 (A105)

Kouichi Akahane(NICT), Jiro Nishinaga(AIST)

10:00 AM - 10:15 AM

[21a-A105-5] Analysis of hopping conduction mechanism in low-temperature-grown GaAs_1-_xBi_x

〇(M2)Minato Harada¹, Tatsuya Umenishi¹, Yusaku Kozai¹, Yoriko Tominaga¹, Mitsuki Yukimune², Fumitaro Ishikawa^2,3, Yasutomo Kajikawa⁴ (1.Hiroshima Univ., 2.Ehime Univ., 3.Hokkaido Univ., 4.Shimane Univ.)

Keywords:Molecular Beam Epitaxy

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Presentation information

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-5] Analysis of hopping conduction mechanism in low-temperature-grown GaAs1-xBix

[21a-A105-5] Analysis of hopping conduction mechanism in low-temperature-grown GaAs_1-_xBi_x