[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-6] Circularly polarized light emission properties of InAs quantum dots tunnel-coupled with a dilute nitride GaNAs quantum well with different thicknesses

〇Masayoshi Hosoe¹, Shino Sato¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaidou Univ.)

Keywords:quantum dot, GaNAs, circularly polarized photoluminescence