The 83rd JSAP Autumn Meeting 2022

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15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[21a-A105-1~9] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 21, 2022 9:00 AM - 11:30 AM A105 (A105)

Kouichi Akahane(NICT), Jiro Nishinaga(AIST)

11:15 AM - 11:30 AM

[21a-A105-9] Effect of initial growth process on residual strain anisotropy in GaAs/Si

〇(M1)Yuito Yasukochi1, Nobuaki Kojima1, Yoshio Ohshita1 (1.Toyota Tech. Inst.)

Keywords:Two-step growth, Migration Enhanced Epitaxy(MEE)