[21a-A202-1~7] 3.8 Terahertz technologies (formerly 3.9)

[21a-A202-2] Wavelength Dependence of Low-Temperature Grown Gallium Arsenic Photo-conductive Antenna

〇HIDEAKI KITAHARA¹, Keisuke Tomonaga¹, Takashi Furuya¹, Mary Clare Sison Escano¹, Masahiko Tani¹ (1.FIR Univ. of Fukui)

Keywords:Terahertz, Sub-band excitation, LT-GaAs

In this study, a large aperture photo-conductive antenna made of low temperature grown GaAs substrate is excited by a near infrared valiable wavelength femtosecond parametric oscillator within the range of wavelength from 1.2 to 1.55 micro meter, and the wavelength dependence was investigated for the amplitude of radiated terahertz wave.