[21a-A205-1~10] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

[21a-A205-3] Silicon Nanocavity by CMOS process with a Q factor of 3.5 million

〇(M1)Masaaki Katsura¹, Yuji Ota¹, Ryota Mitsuhashi², Makoto Okano³, Minoru Ohtsuka³, Miyoshi Seki³, Nobuyuki Yokoyama³, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Met. Univ., 2.Kyoto Univ., 3.AIST)

Keywords:Silicon Nanocavity, CMOS process

Silicon two-dimensional photonic crystal nanocavities are expected to be applied to ultra-compact optical memory, silicon Raman lasers, and space charge sensors. For industrial applications, we have investigated the fabrication of such resonators by a CMOS process using ArF immersion photolithography and have realized nanocavities with a Q-value of about 2 million. This time, we fabricated a nano-resonator using an improved CMOS process and measured its photon lifetime, and we report that we obtained a Q-value of 3.5 million, which is about 1.5 times higher than the conventional Q-value.