11:45 AM - 12:00 PM
[21a-B202-11] Fabrication of the Cu(In,Ga)S2 by the sulfurization with powder sulfur
Keywords:Cu(In,Ga)S2, Thin film, Cu-poor
Cu(In,Ga)S2 (CIGS) solar cells have a band gap of about 1.5 eV, making them ideal absorbing layers for solar cells. CIGS solar cells, when Cu-rich, require toxic KCN etching. In order to avoid the KCN process, the growth process of CIGS with a precursor with controlled Cu-poor composition is investigated in this study.
At a sulfurization temperature of 300°C, Cu segregated on the surface side and Ga and In segregated on the back side. At a sulfurization temperature of 500°C, CuInS2 and CuGaS2 were formed on the front side and the back side, respectively.
At a sulfurization temperature of 300°C, Cu segregated on the surface side and Ga and In segregated on the back side. At a sulfurization temperature of 500°C, CuInS2 and CuGaS2 were formed on the front side and the back side, respectively.