Effect of resistance change in RESET process of ReRAM device from DC pulse OFF time

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Wed. Sep 21, 2022 9:00 AM - 11:45 AM B204 (B204)

11:15 AM - 11:30 AM

〇Chuanyang Huang¹, Masakazu Tanaka¹, Shinchi Okayasu¹, Tomohiro Shimizu¹, Takeshi Ito¹, Shoso Shingubara¹ (1.Kansai Univ.)

Keywords:Resistive Change Device