[21a-C101-1~10] 13.8 Optical properties and light-emitting devices

△ [21a-C101-10] Exciton level structure in hBN-encapsulated monolayer transition metal dichalcogenide probed by sum frequency generation spectroscopy

〇Shinya Takahshi¹, Satoshi Kusaba¹, Kenji Watanabe², Takashi Taniguchi², Kazuhiro Yanagi³, Koichiro Tanaka^1,4 (1.Kyoto Univ., 2.NIMS, 3.Tokyo Metro. Univ., 4.iCeMS, Kyoto Univ.)

Keywords:exciton, monolayer semiconductor, nonlinear spectroscopy

We observed 1s, 2p, and other levels of excitons in hBN-encapsulated monolayer MoSe2 by using sum frequency generation spectroscopy. The energy positions showed fairly good agreement with those numerically calculated values, but there were slight deviations. In the presentation, we will discuss other contributions to the exciton level structure in monolayer transition metal dichalcogenides, such as the electronic band structure and exchange interaction.