[21a-C101-1~10] 13.8 Optical properties and light-emitting devices

△ [21a-C101-5] Fabrication and device characteristics of red LEDs based on Eu-doped ZnO

〇(M2)Kazuto Nishimura¹, Jun Tatebayashi¹, Shuhei Ichikawa^1,2, Shinya Yamada³, Kohei Hamaya³, Yasufumi Fujiwara¹ (1.Grad. Sch. Eng., 2.Research Center for UHVEN, Osaka Univ., 3.Grad. Sch. Eng. Sci.)

Keywords:Light emitting diode

Light-emitting devices based on rare-earth-doped semiconductors have attracted much attention because of their ultra-narrow emission bandwidth and high emission wavelength stability in the surrounding environment. In this study, we focused on Eu-doped ZnO (ZnO:Eu) using ZnO as a matrix material, which is expected to be applied to light-emitting devices. We have successfully fabricated p-GaN/Al₂O₃(/ZnO:Eu)/n-ZnO structures and observed ZnO emission under current drive.