[21a-C105-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21a-C105-5] Proposal of a new ultralow-voltage-retention SRAM (ULVR-SRAM) cell

〇Katsutoshi Ito¹, Yusaku Shiotsu¹, Shuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

Keywords:power gating, SRAM