[21a-C105-1~12] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[21a-C105-6] Power-gating performance of ultralow-voltage-retention SRAM for near-threshold-voltage operation

〇Taketo Kato¹, Yusaku Shiotsu¹, Syuu'ichirou Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)

Keywords:power gating