11:30 AM - 11:45 AM
[21a-C106-10] Development of fast,high-performance, S-DNTT-10 organic transistors using vertical phase separation and self patterning on SAM coated HfOx films.
Keywords:organic transistor, meniscus coating, patterning
We report on the fast deposition technique of S-DNTT-10 (or TIPS-pentacene) crystalline film from the polystyrene (PS) and S-DNTT-10 (or TIPS-pentacene) blend solution onto the HfO2 films by meniscus coating at an elevated temperature for fabricating organic FETs. A vertical phase separation between semiconductor and PS films leads to the reduction of operating voltage. The highly oriented TIPS-pentacene crystalline films were obtained at 0.75-2.0 mm/s at 70℃ which was much faster than room temperature (0.01 mm/s) and a removal of curing process reduces the total fabrication time drastically. These effects eventually lead to both the improvement of FET properties The patterning of semiconductor and polymeric insulator layers were also discussed using the surface selective deposition of solution onto the wettable region obtained by vacuum ul-traviolet (VUV) light (172 nm) irradiation. A S-DNTT-10 FET reduces the operation voltage and subthreshold voltage swings compared with Ph-BTBT-10 owing to the reduced ionization potential and reduced interfacial traps at polymer/semiconductor interface.