[21a-C106-1~10] 12.1 Fabrications and Structure Controls

[21a-C106-8] Low dark current of ultra-flexible organic photodiode with thick active layer using applicator

〇Kazuma Mori¹, Takao Someya¹, Tomoyuki Yokota¹ (1.The Univ. of Tokyo)

Keywords:organic photodiode, fabrication process, applicator

In this research, we have developed an ultra-flexible organic photodiode by forming an active layer on an ultra-thin substrate with a thickness of 1 µm using an applicator. The produced organic photodiode has an active layer thickness of 1900 nm, the external quantum efficiency of 60% at a wavelength of 500 nm, and a dark current density showed 2.2 × 10^-7 A / cm² when driven at -2 V. We have succeeded in achieving high characteristics compared to devices fabricated by conventional spin coating. Furthermore, we evaluated the mechanical properties of the manufactured organic photodiode by 2000 repeated bending tests with a bending radius of 1.5 mm and the increase in dark current was 4% or less.