[21a-C202-1~12] 17.3 Layered materials

[21a-C202-12] Crystallinity Improvement of MoS₂ Nanocrystals by Sulfur Vapor Annealing

〇Ryo Ono¹, Shinya Imai¹, Iriya Muneta¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1.Tokyo Inst. Tech.)

Keywords:sputtering, transition metal dichalcogenide, crystallinity

MoS₂, one of the two-dimensional semiconductors, is a promising channel material for nanosheet transistors because of its potential to achieve high mobility at atomic thickness. While a variety of approaches have been taken to improve the crystallinity of MoS₂ films, this study focuses on the sulfur vapor annealing (SVA) of MoS₂ nanocrystals after sputtering deposition. Raman spectroscopy showed that higher crystallinity was obtained by applying SVA to a nanocrystalline MoS₂ sample than to a highly crystalline MoS₂ sample.