The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[21a-C202-1~12] 17.3 Layered materials

Wed. Sep 21, 2022 9:00 AM - 12:00 PM C202 (C202)

Kentaro Watanabe(Shinshu Univ.)

11:45 AM - 12:00 PM

[21a-C202-12] Crystallinity Improvement of MoS2 Nanocrystals by Sulfur Vapor Annealing

Ryo Ono1, Shinya Imai1, Iriya Muneta1, Kuniyuki Kakushima1, Kazuo Tsutsui1, Hitoshi Wakabayashi1 (1.Tokyo Inst. Tech.)

Keywords:sputtering, transition metal dichalcogenide, crystallinity

MoS2, one of the two-dimensional semiconductors, is a promising channel material for nanosheet transistors because of its potential to achieve high mobility at atomic thickness. While a variety of approaches have been taken to improve the crystallinity of MoS2 films, this study focuses on the sulfur vapor annealing (SVA) of MoS2 nanocrystals after sputtering deposition. Raman spectroscopy showed that higher crystallinity was obtained by applying SVA to a nanocrystalline MoS2 sample than to a highly crystalline MoS2 sample.