[21a-C202-1~12] 17.3 Layered materials

[21a-C202-2] Correlation of Growth-Time Evolution and Defects Introduction Mechanism of Monolayer WS₂ Revealed by In-Situ Monitoring CVD

〇(M2)Yuta Iwamoto¹, Toshiro Kaneko¹, Toshiaki Kato¹ (1.Tohoku Univ.)

Keywords:2D material, in-situ monitoirng, growth mechanism

In this study, in-situ monitoring chemical vapor deposition (CVD) system has been developed to reveal the growth mechanism of tungsten disulfide (WS₂), known as an atomically thin layered material. It is found that the spatial distribution of PL intensity changed between uniform emission and edge-enhanced emission depends on the growth conditions. Furthermore, these differences of emission modes are found to be correlated with time-evolution of WS₂ growth measured by in-situ monitoring CVD.