[21a-C202-1~12] 17.3 Layered materials

△ [21a-C202-7] Surface Diffusion-limited Growth of Large and High-quality Monolayer Tungsten Disulfide with Confined Space and its Optoelectronic Device Application

〇Ryoki Hashimoto¹, Masaaki Misawa¹, Kenji Tsuruta¹, Yasumitsu Miyata², Yasuhiko Hayashi¹, Hiroo Suzuki¹ (1.Okayama Univ., 2.Tokyo Metropolitan Univ.)

Keywords:Transition metal dichalcogenides, Surface Diffusion-limited Growth, Field effect transistor

Large-size growth of monolayer tungsten disulfide (WS₂) was successfully achieved by an advanced chemical vapor deposition method that combines vapor-liquid-solid growth using metal salts and a microreactor constructed with two growth substrates. The growth mechanism was elucidated by combining theoretical calculations for the surface diffusion energy of source atoms and Arrhenius-type activation energy of domain size derived from systematic experiments. Field-effect transistors with monolayer WS₂ possessed a high on-off ratio and field-effect mobility, showing superior device performances.