[21a-C206-1~13] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-C206-13] Temperature dependence of complementary field-effect transistors with Si and Ge nanosheets

〇Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Wen Hsin Chang¹ (1.AIST)

Keywords:CFET, Ge, TCAD