Low Threshold Current 1.55 um-Band Quantum Dot Laser with InP(311)B Substrate

Atsushi Matsumoto; Kouichi Akahane; Shinya Nakajima; Toshimasa Umezawa; Naokatsu Yamamoto; Atsushi Kanno

Presentation information

Oral presentation

3 Optics and Photonics » 3.12 Semiconductor optical devices (formerly 3.13)

[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

Wed. Sep 21, 2022 9:00 AM - 11:45 AM C301 (C301)

Takuro Fujii(NTT), Takeshi Fujisawa(Hokkaido University)

9:00 AM - 9:15 AM

[21a-C301-1] Low Threshold Current 1.55 um-Band Quantum Dot Laser with InP(311)B Substrate

〇Atsushi Matsumoto¹, Kouichi Akahane¹, Shinya Nakajima¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Atsushi Kanno¹ (1.NICT)

Keywords:Quantum dot, LD

In this paper, we improved the characteristics of a ridge-type QD-LD and demonstrated CW operation with a minimum class threshold current of 9.5 mA in an edge-emitting Fabry-Perot laser with a 1.55 um band QD structure.